TSM60NB900CH C5G
TSM60NB900CH C5G
Part Number TSM60NB900CH C5G Description MOSFET N-CHANNEL 600V 4A TO251 Package / Case TO-251-3 Short Leads, IPak, TO-251AAUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 600V 4A (Tc) 36.8W (Tc) Through Hole TO-251 (IPAK)
To learn about the specification of TSM60NB900CH C5G, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add TSM60NB900CH C5G with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of TSM60NB900CH C5G.
We are offering TSM60NB900CH C5G for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
TSM60NB900CH C5G - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TSM60NB900CH Standard Package 1875 Manufacturer Taiwan Semiconductor Corporation Series - Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 900mOhm @ 1.2A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 9.6nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 315pF @ 100V FET Feature - Power Dissipation (Max) 36.8W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-251 (IPAK) Package / Case TO-251-3 Short Leads, IPak, TO-251AA
TSM60NB900CH C5G - Related ProductsMore >>
FDB13AN06A0 ON Semiconductor, N-Channel 60V 10.9A (Ta), 62A (Tc) 115W (Tc) Surface Mount D²PAK, PowerTrench®
View
SPA11N60C3XKSA1 Infineon Technologies, N-Channel 600V 11A (Tc) 33W (Tc) Through Hole PG-TO220-3-31 Full Pack, CoolMOS™
View
SIJA58DP-T1-GE3 Vishay Siliconix, N-Channel 40V 60A (Tc) 27.7W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV
View
STP11N65M5 STMicroelectronics, N-Channel 650V 9A (Tc) 85W (Tc) Through Hole TO-220, MDmesh™ V
View
FDS2572 ON Semiconductor, N-Channel 150V 4.9A (Tc) 2.5W (Ta) Surface Mount 8-SOIC, UltraFET™
View
FDS8884 ON Semiconductor, N-Channel 30V 8.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®
View
DN1509K1-G Microchip Technology, N-Channel 90V 200mA (Tj) 490mW (Ta) Surface Mount SOT-23-5,
View
IXFX120N20 IXYS, N-Channel 200V 120A (Tc) 560W (Tc) Through Hole PLUS247™-3, HiPerFET™
View
DMN3051L-7 Diodes Incorporated, N-Channel 30V 5.8A (Ta) 700mW (Ta) Surface Mount SOT-23-3,
View
IRFB4227PBF Infineon Technologies, N-Channel 200V 65A (Tc) 330W (Tc) Through Hole TO-220AB, HEXFET®
View
IPD65R225C7ATMA1 Infineon Technologies, N-Channel 650V 11A (Tc) 63W (Tc) Surface Mount PG-TO252-3, CoolMOS™ C7
View
FDB44N25TM ON Semiconductor, N-Channel 250V 44A (Tc) 307W (Tc) Surface Mount D²PAK, UniFET™
View
TSM60NB900CH C5G - Tags
English
